Micron Technology DRAM SDRAM-DDR3L, Part #: MT53E128M32D2DS-046 AIT:A | Dynamic random access memory | DEX hinge Intel Part #EP4CGX30CF23I7N

Intel Part #EP4CGX30CF23I7N

2V pseudo open-drain I/O

Current - Continuous Drain (Id) @ 25°C: 21A (Tc)

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Broadcom 300Gbps 10/100 Gigabit Ethernet StrataDNX® Qumran-AX Ethernet Switch - IC - part #BCM88470CB0IFSBG

Micron Technology DRAM SDRAM-DDR3L, Part #: MT53E128M32D2DS-046 AIT:A | Dynamic random access memory | DEX hinge Intel Part #EP4CGX30CF23I7NMicron Technology DRAM SDRAMMobile , Part #: MT53E128M32D2DS 046 AIT: A features: Ultra low voltage core and I O power supplies VDD1 = 1. 701. 95V; 1. 80V nominal VDD2 = 1. 061. 17V; 1. 10V nominal VDDQ = 1. 061. 17V; 1. 10V nominal or Low VDDQ = 0. 570. 65V; 0. 60V nominal Frequency range 213310 MHz (data rate range: 426620 Mb s pin) 16n prefetch DDR architecture 8 internal banks per channel for concurrent operation Single data rate CMD ADR entry