Micron Technology DRAM SDRAM-DDR3L, Part #: MT52L512M32D2PU-107 WT:B | Dynamic random access memory | DEX Wind Power 3VOUT from 12VIN

3VOUT from 12VIN

Xilinx Field Programmable Gate Array Part #XCKU3P-1SFVB784E

NXP:S912ZVCA19F0MLFR

Analog Devices Operational Amplifier Part #SMP18FSZ

Analog Devices RF Switch IC Part #ADRF5025BCCZN

Micron Technology DRAM SDRAM-DDR3L, Part #: MT52L512M32D2PU-107 WT:B | Dynamic random access memory | DEX Wind Power 3VOUT from 12VINMicron Technology DRAM , Part #: MT52L512M32D2PU 107 WT: B features: VDD = VDDQ = 1. 5V 0. 075V 1. 5V center terminated push pull I O Differential bidirectional data strobe 8n bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on die termination (ODT) for data, strobe, and mask signals Programmable CAS READ latency (CL) Posted CAS additive latency (AL) Programmable CAS WRITE latency (CWL) based on t CK