Micron Technology DRAM SDRAMMobile-, Part #: MT40A512M16LY-062E:E | Dynamic random access memory | DEX silicon graphics 2V pseudo open-drain I/O

2V pseudo open-drain I/O

TMS320F28066PNT

5CB0S57342

Xilinx Field Programmable Gate Array Part #XCKU15P-1FFVA1156I

TMR3: 16-bit timer/counter

Micron Technology DRAM SDRAMMobile-, Part #: MT40A512M16LY-062E:E | Dynamic random access memory | DEX silicon graphics 2V pseudo open-drain I/OMicron Technology DRAM SDRAM DDR4, Part #: MT40A512M16LY 062E: E features: VDD = VDDQ = 1. 2V 60mV VPP = 2. 5V 125mV +250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O Refresh time of 8192 cycle at TC temperature range: 64ms at 40C to 85C 32ms at 85C to 95C 16ms at 95C to 105C 8ms at 105C to 125C 16 internal banks (x8): 4 groups of 4 banks each 8 internal banks (x16): 2 groups of 4 banks each 8n bit prefetch architecture